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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 56047011, Fachbücher, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 52044011, Fremdsprachige Bücher<

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 56047011, Wissenschaft, 52044011, Fremdsprachige Bücher<

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

ISBN: 3866280874

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 56047011, Wissenschaft, 52044011, Fremdsprachige Bücher<

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - pocketboek

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… Meer...

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - pocketboek

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… Meer...

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

Name: Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)
Brand: Hartung-Gorre
SKU: 3866280874
Price: 81.42 EUR
Availability: LimitedAvailability

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

- <img src="http://www.assoc-amazon.de/e/ir?t=sfb&l=as2&o=3&a=3866280874" width="1" height="1" border="0" alt="" style="border:none !important; margin:0px !important;" />Neuware Verzendingskosten:Innerhalb EU, Schweiz und Liechtenstein (sofern Lieferung möglich). Versandfertig in 1 - 2 Werktagen (EUR 3.00) hartung_gorre_verlag

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Timm Höhr:

Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - pocketboek

ISBN: 3866280874

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… Meer...

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - pocketboek

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… Meer...

- Neuware. Verzendingskosten:Europa Zone 1: GBP 5,48 pro Produkt.. Usually dispatched within 1-2 business days. Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 4.80) Smaller World Future

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - pocketboek

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… Meer...

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)

auteur:	Timm Höhr
Titel:	Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)
ISBN:	3866280874

Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.

Gedetalleerde informatie over het boek. - Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)

ISBN (ISBN-10): 3866280874 (ISBN-13: 9783866280878)
pocket book
Uitgever: Hartung-Gorre

Boek bevindt zich in het datenbestand sinds 2008-09-13T00:14:04+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2018-01-17T15:14:57+01:00 (Amsterdam)
ISBN/EAN: 3866280874

ISBN - alternatieve schrijfwijzen:
3-86628-087-4
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: timm

Gegevens van de uitgever

Auteur: Timm Höhr
Titel: Series in Microelectronics; Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices
Uitgeverij: Hartung-Gorre
134 Bladzijden
Verschijningsjaar: 2006-10-10
Taal: Engels
64,00 € (DE)
65,80 € (AT)
125,20 CHF (CH)
Not available (reason unspecified)

BC; KART; Hardcover, Softcover / Informatik, EDV/Hardware; Computerhardware; Ingenieurwissenschaften; semiconductor device modeling; Shockley-Read-Hall recombination; quantum transport; tunneling effect

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