2001, ISBN: 9783540663874

[PU: Springer, Berlin], Neu - Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale producti… Meer...

[PU: Springer, Berlin], Neu - Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students. -, DE, [SC: 0.00], Neuware, gewerbliches Angebot, 248, [GW: 542g], Banküberweisung, Offene Rechnung, Kreditkarte, PayPal, Offene Rechnung (Vorkasse vorbehalten), Spedizioni internazionali<

2001, ISBN: 9783540663874

[PU: Springer, Berlin], Neu - Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale producti… Meer...

[PU: Springer, Berlin], Neu - Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students. -, DE, [SC: 0.00], Neuware, gewerbliches Angebot, 248, [GW: 542g], Banküberweisung, Offene Rechnung, Kreditkarte, PayPal, Offene Rechnung (Vorkasse vorbehalten), Internationaler Versand<

ISBN: 9783540663874

Hardback, [PU: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG], This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, t… Meer...

Hardback, [PU: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG], This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures., Medicine, Science: General Issues, Condensed Matter Physics (liquid State & Solid State Physics), Applied Physics, Engineering: General, Mechanical Engineering & Materials, Materials Science, Electrical Engineering, Electronics Engineering, Electronic Devices & Materials, Computer Hardware, Storage Media & Peripherals, Systems Analysis & Design, Computer Architecture & Logic Design<

ISBN: 9783540663874

Hardback, [PU: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG], This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, t… Meer...

Hardback, [PU: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG], This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures., Electronic Devices & Materials<

2000, ISBN: 3540663878

Ferroelectric Memories ab 179.99 € als gebundene Ausgabe: 2000. 2000. Aus dem Bereich: Bücher, Wissenschaft, Technik, Medien > Bücher, Springer-Verlag GmbH