ISBN: 9781402083624

The Nile on eBay   CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies by Andrei Pavlov, Manoj Sachdev The monograph will be dedicated to SRAM (memory) design an… Meer...

The Nile on eBay   CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies by Andrei Pavlov, Manoj Sachdev The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges. FORMATHardcover LANGUAGEEnglish CONDITIONBrand New Publisher Description The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges. Notes Gives a process-aware perspective on SRAM circuit design and testProvides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise MarginIntroduces the concept of stability fault modellingProvides an Overview of specialized Design for Testability techniques for SRAM stability testAddresses soft-error considerations of SRAM design Back Cover As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions. Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies. Author Biography Prof. Sachdev has authored several successful books with Springer Table of Contents Foreword. Preface. Acronyms. 1. INTRODUCTION AND MOTIVATION. 1.1 Motivation. 1.2 SRAM in the Computer Memory Hierarchy. 1.3 Technology Scaling and SRAM Design and Test. 1.4 SRAM test economics. 1.5 SRAM Design and Test Tradeoffs. 1.6 Redundancy. 2. SRAM CIRCUIT DESIGN AND OPERATION. 2.1 Introduction. 2.2 SRAM block structure. 2.3 SRAM cell design. 2.4 Cell layout considerations. 2.5 Sense Amplifier and Bit Line Precharge-Equalization. 2.6 Write Driver. 2.7 Row Address Decoder and Column MUX. 2.8 Address Transition Detector. 2.9 Timing Control Schemes. 2.10 Summary. 3. SRAM CELL STABILITY: DEFINITION, MODELING AND TESTING. 3.1 Introduction. 3.2 Static noise margin of SRAM cells. 3.3 SNM Definitions. 3.4 Analytical expressions for SNM calculations. 3.5 SRAM cell stability sensitivity factors. 3.6 SRAM cell stability fault model. 3.7 SRAM Cell Stability Detection Concept. 3.8 March tests and stability fault detection in SRAMs. 3.9 Summary. 4. TRADITIONAL SRAM FAULT MODELS AND TEST PRACTICES. 4.1 Introduction. 4.2 Traditional fault models. 4.3 Traditional SRAM test practices. 4.4 Summary. 5. TECHNIQUES FOR DETECTION OF SRAM CELLS WITH STABILITY FAULTS. 5.1 Introduction. 5.2 Classification of SRAM cell stability test techniques. 5.3 Passive SRAM Cell Stability Test Techniques. 5.4 Active SRAM Cell Stability Test Techniques. 5.5 Summary. 6. SOFT ERROR IN SRAMs: SOURCES, MECHANISM AND MITIGATION TECHNIQUES. 6.1 Introduction. 6.2 Soft Error Mechanism. 6.3 Sources of Soft Errors. 6.4 Soft Errors and Defects in the Pull-Up Path of a Cell. 6.5 Soft Error Mitigation Techniques. 6.6 Leakage-Reduction Techniques and the SER. 6.7 Summary. References. Index. Long Description As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions. Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies. Feature Gives a process-aware perspective on SRAM circuit design and test Provides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise Margin Introduces the concept of stability fault modelling Provides an Overview of specialized Design for Testability techniques for SRAM stability test Addresses soft-error considerations of SRAM design Details ISBN1402083629 Author Manoj Sachdev Short Title CMOS SRAM CIRCUIT DESIGN & PAR Series Frontiers in Electronic Testing Language English ISBN-10 1402083629 ISBN-13 9781402083624 Media Book Format Hardcover Series Number 40 Year 2008 Imprint Springer-Verlag New York Inc. Place of Publication New York, NY Country of Publication United States Pages 194 Edition 2008th Subtitle Process-Aware SRAM Design and Test DOI 10.1007/978-1-4020-8363-1 AU Release Date 2008-06-21 NZ Release Date 2008-06-21 US Release Date 2008-06-21 UK Release Date 2008-06-21 Publisher Springer-Verlag New York Inc. Edition Description 2008 ed. Publication Date 2008-06-21 Alternative 9789048178551 DEWEY 621.38152 Illustrations XVI, 194 p. Audience Professional & Vocational We've got thisAt The Nile, if you're looking for it, we've got it.With fast shipping, low prices, friendly service and well over a million items - you're bound to find what you want, at a price you'll love! TheNile_Item_ID:142671162; , Nieuw, Festpreisangebot, [LT: FixedPrice], ISBN-13: 9781402083624, Book Title: CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Techn, Publication Year: 2008, Type: Textbook, Format: Hardcover, Subject Area: Material Science, Language: English, Publication Name: CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies: Process-Aware SRAM Design and Test, Item Height: 235mm, Item Width: 155mm, Item Weight: 1050g, Number of Pages: 194 Pages, Springer-Verlag NY Inc.<