2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Meer...
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2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Meer...
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - gebonden uitgave, pocketboek
2011, ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - gebonden uitgave, pocketboek
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
| alibris.co.uk |
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
| alibris.co.uk |
2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Meer...
2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Meer...
Straininduced Effects in Advanced Mosfets Computational Microelectronics - gebonden uitgave, pocketboek
2011
ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
Straininduced Effects in Advanced Mosfets Computational Microelectronics - gebonden uitgave, pocketboek
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
Bibliografische gegevens van het best passende boek
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Gedetalleerde informatie over het boek. - Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)
EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Gebonden uitgave
Verschijningsjaar: 2010
Uitgever: Springer
252 Bladzijden
Gewicht: 0,633 kg
Taal: eng/Englisch
Boek bevindt zich in het datenbestand sinds 2011-04-09T21:17:05+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2023-07-05T19:56:42+02:00 (Amsterdam)
ISBN/EAN: 9783709103814
ISBN - alternatieve schrijfwijzen:
3-7091-0381-9, 978-3-7091-0381-4
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: viktor
Titel van het boek: mosfet, mosfets, viktor, microelectronics
Gegevens van de uitgever
Auteur: Viktor Sverdlov
Titel: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs
Uitgeverij: Springer; Springer Wien
252 Bladzijden
Verschijningsjaar: 2010-11-24
Vienna
Taal: Engels
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
Available
XIV, 252 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; EA; BC
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givencomprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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