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2003, ISBN: 9789048162772
Springer Netherlands, 2003. Paperback. New. 284 pages. 8.80x6.00x0.60 inches., Springer Netherlands, 2003, 6
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2010, ISBN: 9048162777
pocketboek
[EAN: 9789048162772], Neubuch, [PU: Springer, Dordrecht], Paperback. Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phas… Meer...
2010, ISBN: 9048162777
[EAN: 9789048162772], Neubuch, [SC: 0.0], [PU: Springer Netherlands], NATUR; TECHNOLOGIE; CHEMISTRY; COATING; DEVELOPMENT; HEATTRANSFER; MANUFACTURING; METAL; PHYSICS; PRESSURE; TRANSPORT… Meer...
2010
ISBN: 9789048162772
[ED: Softcover], [PU: Springer / Springer Netherlands], Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, … Meer...
2010, ISBN: 9789048162772
Buch, Softcover, Softcover reprint of hardcover 1st ed. 2003, Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemi… Meer...
2003, ISBN: 9789048162772
Springer Netherlands, 2003. Paperback. New. 284 pages. 8.80x6.00x0.60 inches., Springer Netherlands, 2003, 6
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Gedetalleerde informatie over het boek. - Principles of Chemical Vapor Deposition
EAN (ISBN-13): 9789048162772
ISBN (ISBN-10): 9048162777
Gebonden uitgave
pocket book
Verschijningsjaar: 2010
Uitgever: Springer
288 Bladzijden
Gewicht: 0,439 kg
Taal: eng/Englisch
Boek bevindt zich in het datenbestand sinds 2012-11-13T15:07:08+01:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2024-01-05T18:20:54+01:00 (Amsterdam)
ISBN/EAN: 9789048162772
ISBN - alternatieve schrijfwijzen:
90-481-6277-7, 978-90-481-6277-2
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: zura, dobkin
Gegevens van de uitgever
Auteur: D.M. Dobkin; M.K. Zuraw
Titel: Principles of Chemical Vapor Deposition
Uitgeverij: Springer; Springer Netherland
273 Bladzijden
Verschijningsjaar: 2010-12-01
Dordrecht; NL
Gedrukt / Gemaakt in
Gewicht: 0,454 kg
Taal: Engels
213,99 € (DE)
219,99 € (AT)
236,00 CHF (CH)
POD
XI, 273 p.
BC; Characterization and Evaluation of Materials; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; Natur; Technologie; chemistry; coating; development; heat transfer; manufacturing; metal; physics; pressure; transport; vapor; Industrial Chemistry/Chemical Engineering; Manufacturing, Machines, Tools, Processes; Nuclear Physics, Heavy Ions, Hadrons; Characterization and Analytical Technique; Industrial Chemistry; Machines, Tools, Processes; Nuclear Physics; Industrielle Chemie und Chemietechnologie; Fertigungstechnik und Ingenieurwesen; Atom- und Molekularphysik; BB
Acknowledgements. Preface. 1: Introduction. 1. What's behind the facade? 2. Generic reactors and process considerations. 3. Tube and showerhead reactor examples. 2: Reactors without transport. 1. What goes in must go somewhere: Measuring gases. 2. Review: Kinetic theory. 3. The zero-dimensional reactor. 4. Zero-dimensional tube and showerhead examples. 3: Mass transport. 1. Introduction to transport. 2. Convection and diffusion. 3. Diffusion: Physics and math. 4. Fluid flow and convective transport. 5. When flows matter: The Knudsen number. 6. Tube and showerhead examples. 7. On to photons. 4: Heat transport. 1. What is heat (energy) transport? 2. Heat conduction and diffusion. 3. Convective heat transfer made (very) simple. 4. Natural convection. 5. Radiative heat transfer. 6. Temperature measurement. 7. Tube and showerhead examples. 5: Chemistry for CVD. 1. What does the C stand for anyway? 2. Volatility, the V in CVD. 3. Equilibrium: Where things are going. 4. Kinetics: The slowest step wins. 5. Real precursors for real films. 6. Tube reactor example. 7. A few final remarks. 6: Gas discharge plasmas for CVD. 1. Plasma discharges: An instant review. 2. The low-pressure cold-plasma state. 3. Key parameters for capacitive plasma state. 4. Alternative excitation methods. 5. Plasmas for deposition. 6. Plasma damage. 7. Technical details. 8. Ongoing example: Parallel plate reactor. 9. A remark on computational tools. 7: CVD films. 1. Why CVD? 2. Silicon dioxide. 3. Silicon nitride. 4. Tantalum pentoxide. 5. Metal deposition by CVD. 6. Concluding remarks. 8: CVD reactors. 1. CVD reactor configurations. 2. Tube reactors. 3. Showerhead reactors. 4. High density plasma reactors. 5. Injector-based atmospheric pressure reactors. 6. Reactor conclusions. Index.Andere boeken die eventueel grote overeenkomsten met dit boek kunnen hebben:
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