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2010, ISBN: 9789048167869

[ED: Softcover], [PU: Springer Netherlands], According to Bernie Meyerson, IBM s chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere b… Meer...

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Herausgegeben von Demkov, Alexander A. Navrotsky, Alexandra:

Materials Fundamentals of Gate Dielectrics - pocketboek

2010, ISBN: 9789048167869

[ED: Softcover], [PU: Springer Netherlands], According to Bernie Meyerson, IBM s chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere b… Meer...

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2011

ISBN: 9048167868

[EAN: 9789048167869], Neubuch, [PU: Springer, Netherlands], Language: English. Brand new Book. According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semi… Meer...

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Materials Fundamentals of Gate Dielectrics (Paperback) - pocketboek

2011, ISBN: 9048167868

[EAN: 9789048167869], Neubuch, [PU: Springer, Netherlands], Language: English. Brand new Book. According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semi… Meer...

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Erscheinungsdatum: 03.02.2011, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Materials Fundamentals of Gate Dielectrics, Auflage: Softcover reprint of hardcover 1st ed. 20… Meer...

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Materials Fundamentals of Gate Dielectrics

This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.

Gedetalleerde informatie over het boek. - Materials Fundamentals of Gate Dielectrics


EAN (ISBN-13): 9789048167869
ISBN (ISBN-10): 9048167868
Gebonden uitgave
pocket book
Verschijningsjaar: 2011
Uitgever: Springer-Verlag GmbH
484 Bladzijden
Gewicht: 0,764 kg
Taal: eng/Englisch

Boek bevindt zich in het datenbestand sinds 2012-10-14T12:12:12+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2020-02-25T15:39:04+01:00 (Amsterdam)
ISBN/EAN: 9789048167869

ISBN - alternatieve schrijfwijzen:
90-481-6786-8, 978-90-481-6786-9


Gegevens van de uitgever

Auteur: Alexander A. Demkov; Alexandra Navrotsky
Titel: Materials Fundamentals of Gate Dielectrics
Uitgeverij: Springer; Springer Netherland
476 Bladzijden
Verschijningsjaar: 2011-02-03
Dordrecht; NL
Gedrukt / Gemaakt in
Gewicht: 0,825 kg
Taal: Engels
181,89 € (DE)
186,99 € (AT)
200,50 CHF (CH)
POD

BC; Previously published in hardcover; Hardcover, Softcover / Physik, Astronomie/Allgemeines, Lexika; Mathematik und Naturwissenschaften; Verstehen; High-K gate dielectrics; Inorganic chemistry; Semiconductors and insulators; Surface and interface physics; electronics; physical chemistry; thermodynamics; B; Physics, general; Physical Chemistry; Optical and Electronic Materials; Electrical Engineering; Physics and Astronomy; Physical Chemistry; Optical Materials; Electrical and Electronic Engineering; Physics and Astronomy; Physikalische Chemie; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Elektrotechnik; BB

Preface. 1: Materials and Physical Properties of High-K Oxide Films; Ran Liu. 2: Device Principles of High-K Dielectrics; Kurt Eisenbeiser. 3: Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Alexandra Navrotsky and Sergey V. Ushakov. 4: Electronic Structure and Chemical Bonding in High-K Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces; Gerald Lucovsky. 5: Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; J. Robertson and P.W. Peacock. 6: Dielectric Properties of Simple and Complex Oxides from First-Principles; U.V. Waghmare and K.M. Rabe. 7: IVb Transition Metal Oxides and Silicates: An Ab Initio Study; Gian-Marco Rignanese. 8: The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors; Rodney Mckee. 9: Interfacial Properties of Epitaxial Oxide/Semiconductor Systems; Y. Liang and A.A. Demkov. 10: Functional Structures; Matt Copel. 11: Mechanistic Studies of Dielectric Growth on Silicon; Martin M. Frank and Yves J. Chabal. 12: Methodology for Development of High-k Stacked Gate Dielectrics on III–V Semiconductors; Matthias Passlack. Index

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