2010, ISBN: 9048167868

Materials Fundamentals of Gate DielectricsEinbandPaperback / SoftbackAutor(en)Demkov, Alexander A.; Navrotsky, AlexandraVerlagSpringer NetherlandsAusgabe2010Formatangaben476 pages; VIII, … Meer...

Materials Fundamentals of Gate DielectricsEinbandPaperback / SoftbackAutor(en)Demkov, Alexander A.; Navrotsky, AlexandraVerlagSpringer NetherlandsAusgabe2010Formatangaben476 pages; VIII, 476 p.; 240 x 160 mmSpracheengISBN9048167868ISBN-13 / EAN9789048167869Schlagwortethermodynamics, Inorganic chemistry, Semiconductors and insulators, Surface and interface physics, electronics, physical chemistry, High-K gate dielectricsPreisEUR 160,49 (inkl. MwSt.)NEUWARE - Tagesaktueller, sicherer und weltweiter Versand. Rechnung legen wir bei.This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. Hinweis: Auflage und/oder Erscheinungsjahr können im Buchkatalog von eBay unter Umständen von unseren Angeboten abweichen. Dies gilt insbesondere wenn eine ISBN durch den Verlag doppelt vergeben wurde. Im Einzelfall bzw. bei Bedarf bitte VOR Bestellung erfragen.Angaben zur Versandzeit stammen aus Standardeinstellung von ebay; Wir verschicken tagesaktuell; Sendungen unter 1 kg werden als Waren-/Büchersendung (Laufzeiten sind leider sehr unterschiedlich zwischen 2 und 14 Werktagen) verschickt, ab 1 Kg erfolgt der Versand über DPD.Falls Sie eine Bestellung dringend bzw. zu einem bestimmten Zeitpunkt benötigen, wählen Sie bitte immer die Versandart PAKETVERSAND (DPD Classic), ansonsten können wir die Lieferzeiten nicht garantieren.Artikel eingestellt mit dem w+h GmbH eBay-ServiceDaten- und Bilderhosting mit freundlicher Unterstützung von Buchfreund. (2023-05-14), Festpreisangebot, [LT: FixedPrice], EAN: 9789048167869, Buchtitel: Materials Fundamentals of Gate Dielectrics 1228, Sprache: Englisch, Format: 476 pages; VIII, 476 p.; 240 x 160 mm, Produktart: Paperback / Softback, Anzahl der Seiten: 476 pages, Gewicht: 828g, 2010<

2003, ISBN: 9789048167869

[ED: Taschenbuch], [PU: Springer Netherlands], Neuware - This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to … Meer...

[ED: Taschenbuch], [PU: Springer Netherlands], Neuware - This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. - Besorgungstitel - vorauss. Lieferzeit 3-5 Tage., DE, [SC: 2.70], Neuware, gewerbliches Angebot, 240x160x25 mm, 484, [GW: 766g], Banküberweisung, Offene Rechnung, Kreditkarte, PayPal, Offene Rechnung (Vorkasse vorbehalten), Internationaler Versand<

2011, ISBN: 9048167868

[EAN: 9789048167869], Neubuch, [SC: 0.0], [PU: Springer Netherlands], SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYSICALCHEMISTRY; THERMODYNAMICS; HIGH-KGATEDI… Meer...

[EAN: 9789048167869], Neubuch, [SC: 0.0], [PU: Springer Netherlands], SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYSICALCHEMISTRY; THERMODYNAMICS; HIGH-KGATEDIELECTRICS; INORGANICCHEMISTRY, Druck auf Anfrage Neuware -This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of thesematerials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. 484 pp. Englisch, Books<

2011, ISBN: 9048167868

[EAN: 9789048167869], Neubuch, [SC: 0.0], [PU: Springer Netherlands], HIGH-KGATEDIELECTRICS; INORGANICCHEMISTRY; SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYS… Meer...

[EAN: 9789048167869], Neubuch, [SC: 0.0], [PU: Springer Netherlands], HIGH-KGATEDIELECTRICS; INORGANICCHEMISTRY; SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYSICALCHEMISTRY; THERMODYNAMICS, Druck auf Anfrage Neuware -This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of thesematerials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. 484 pp. Englisch, Books<

2011, ISBN: 9048167868

[EAN: 9789048167869], Neubuch, [PU: Springer Netherlands], HIGH-KGATEDIELECTRICS; INORGANICCHEMISTRY; SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYSICALCHEMIST… Meer...

[EAN: 9789048167869], Neubuch, [PU: Springer Netherlands], HIGH-KGATEDIELECTRICS; INORGANICCHEMISTRY; SEMICONDUCTORSANDINSULATORS; SURFACEANDINTERFACEPHYSICS; ELECTRONICS; PHYSICALCHEMISTRY; THERMODYNAMICS, Druck auf Anfrage Neuware -This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of thesematerials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. 484 pp. Englisch, Books<