Boeken: Vinden. Vergelijken. Kopen.

ISBN: 9789048171484

ID: 10988626

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail. These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits. Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas. Transistor Level Modeling for Analog/RF IC Design Grabinski, Wladyslaw / Nauwelaers, Bart / Schreurs, Dominique, Springer

ISBN: 9789048171484

ID: 9789048171484

Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of integrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The ?rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device models. However, the capability of the computer and accuracy of the model were far from satisfactory, and there are many cases of the necessity of circuit re-design after evaluation of the ?rst chip. The second wave hit us in the middle of 1980s, when the EWS (Engine- ing Work Station) was introduced for use by designers. Books > Engineering Soft cover, Springer Shop

2010, ISBN: 9048171482

gebonden uitgave, ID: A12092715

Softcover reprint of hardcover 1st ed. 2006 Kartoniert / Broschiert Engineering (Maschinenbau/Ingenieurswesen), allgemein, Elektrotechnik, Elektronik, Mikrowellentechnik, Hardware; LeistungsfeldeffektMOSFET; Potential; Standard; VHDL; Verilog; field-effect metal oxide semiconductur field-effect transistor; Model; Semiconductor; Simulation; Transistor, mit Schutzumschlag neu, [PU:Springer Netherlands; Springer Netherland]

ISBN: 9789048171484

Paperback, [PU: Springer], The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization., Circuits & Components

2006, ISBN: 9048171482

gebonden uitgave, ID: 13447784

Transistor Level Modeling for Analog/RF IC Design ab 119.99 EURO Softcover reprint of hardcover 1st ed. 2006 Medien > Bücher