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ISBN: 9789048171484
ID: 10988626
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail. These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits. Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas. Transistor Level Modeling for Analog/RF IC Design Grabinski, Wladyslaw / Nauwelaers, Bart / Schreurs, Dominique, Springer
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2010, ISBN: 9789048171484
gebonden uitgave, ID: 71787609
Erscheinungsdatum: 19.10.2010, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Transistor Level Modeling for Analog/RF IC Design, Auflage: Softcover reprint of hardcover 1st ed. 2006, Redaktion: Grabinski, Wladyslaw // Nauwelaers, Bart // Schreurs, Dominique, Verlag: Springer Netherlands // Springer Netherland, Sprache: Englisch, Schlagworte: Engineering // Maschinenbau // Ingenieurswesen // allgemein // Elektrotechnik // Elektronik // Mikrowellentechnik, Rubrik: Elektronik // Elektrotechnik, Nachrichtentechnik, Seiten: 308, Informationen: Previously published in hardcover, Gewicht: 533 gr, Verkäufer: averdo Belletristik
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2010, ISBN: 9048171482
gebonden uitgave, ID: A12092715
Softcover reprint of hardcover 1st ed. 2006 Kartoniert / Broschiert Engineering (Maschinenbau/Ingenieurswesen), allgemein, Elektrotechnik, Elektronik, Mikrowellentechnik, Hardware; LeistungsfeldeffektMOSFET; Potential; Standard; VHDL; Verilog; field-effect metal oxide semiconductur field-effect transistor; Model; Semiconductor; Simulation; Transistor, Protège-cahier neu, [PU:Springer Netherlands; Springer Netherland]
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ISBN: 9789048171484
ID: 9789048171484
Engineering; Circuits and Systems; Electronics and Microelectronics, Instrumentation; Microwaves, RF and Optical Engineering; Electrical Engineering Hardware, Leistungsfeldeffekttransistor, MOSFET, Potential, Standard, VHDL, Verilog, analog, field-effect transistor, metal oxide semiconductur field-effect transistor, model, modeling, semiconductor, simulation, transistor Books, Springer Shop
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ISBN: 9789048171484
ID: 9789048171484
Transistor Level Modeling for Analog/RF IC Design Transistor-Level-Modeling-for-Analog-RF-IC-Design~~Wladyslaw-Grabinski Science>Engineering>ELEC Engr Paperback, Springer Netherlands
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Gedetalleerde informatie over het boek. - Transistor Level Modeling for Analog/RF IC Design
EAN (ISBN-13): 9789048171484
ISBN (ISBN-10): 9048171482
Gebonden uitgave
pocket book
Verschijningsjaar: 2010
Uitgever: Springer-Verlag GmbH
308 Bladzijden
Gewicht: 0,493 kg
Taal: eng/Englisch
Boek bevindt zich in het datenbestand sinds 27.05.2012 09:41:46
Boek voor het laatst gevonden op 13.01.2019 14:42:54
ISBN/EAN: 9789048171484
ISBN - alternatieve schrijfwijzen:
90-481-7148-2, 978-90-481-7148-4
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