Transistor Level Modeling for Analog/RF IC Design / Wladyslaw Grabinski (u. a.) / Taschenbuch / Paperback / XIV / Englisch / 2010 / Springer Netherland / EAN 9789048171484 - pocketboek
2010, ISBN: 9789048171484
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ISBN: 9789048171484
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of con… Meer...
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2010, ISBN: 9789048171484
Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 308 Seiten, Publiziert: 2010-10-19T00:00:01Z, Produktgruppe: Buch, 1.09 kg, Verkaufsrang: 1349635, Elektrotech… Meer...
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2010, ISBN: 9789048171484
Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 308 Seiten, Publiziert: 2010-10-19T00:00:01Z, Produktgruppe: Buch, 1.09 kg, Verkaufsrang: 1349635, Elektrotech… Meer...
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Transistor Level Modeling for Analog/RF IC Design / Wladyslaw Grabinski (u. a.) / Taschenbuch / Paperback / XIV / Englisch / 2010 / Springer Netherland / EAN 9789048171484 - pocketboek
2010, ISBN: 9789048171484
gebonden uitgave
[ED: Taschenbuch], [PU: Springer Netherland], The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variet… Meer...
ISBN: 9789048171484
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of con… Meer...
2010
ISBN: 9789048171484
Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 308 Seiten, Publiziert: 2010-10-19T00:00:01Z, Produktgruppe: Buch, 1.09 kg, Verkaufsrang: 1349635, Elektrotech… Meer...
2010, ISBN: 9789048171484
Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 308 Seiten, Publiziert: 2010-10-19T00:00:01Z, Produktgruppe: Buch, 1.09 kg, Verkaufsrang: 1349635, Elektrotech… Meer...
2006, ISBN: 9789048171484
*Transistor Level Modeling for Analog/RF IC Design* - Softcover reprint of hardcover 1st ed. 2006 / Taschenbuch für 106.99 € / Aus dem Bereich: Bücher, Wissenschaft, Technik Medien > Büch… Meer...
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Gedetalleerde informatie over het boek. - Transistor Level Modeling for Analog/RF IC Design
EAN (ISBN-13): 9789048171484
ISBN (ISBN-10): 9048171482
Gebonden uitgave
pocket book
Verschijningsjaar: 2010
Uitgever: Springer Netherlands
308 Bladzijden
Gewicht: 0,493 kg
Taal: eng/Englisch
Boek bevindt zich in het datenbestand sinds 2012-05-27T09:41:46+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2024-03-29T16:19:58+01:00 (Amsterdam)
ISBN/EAN: 9789048171484
ISBN - alternatieve schrijfwijzen:
90-481-7148-2, 978-90-481-7148-4
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: grabinski, schreurs, dominique, wladyslaw
Titel van het boek: analog, ana, transistor
Gegevens van de uitgever
Auteur: Wladyslaw Grabinski; Bart Nauwelaers; Dominique Schreurs
Titel: Transistor Level Modeling for Analog/RF IC Design
Uitgeverij: Springer; Springer Netherland
294 Bladzijden
Verschijningsjaar: 2010-10-19
Dordrecht; NL
Gedrukt / Gemaakt in
Taal: Engels
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 294 p.
BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; Hardware; Leistungsfeldeffekttransistor; MOSFET; Potential; Standard; VHDL; Verilog; analog; field-effect transistor; metal oxide semiconductur field-effect transistor; model; modeling; semiconductor; simulation; transistor; Electronic Circuits and Systems; Electronics and Microelectronics, Instrumentation; Microwaves, RF Engineering and Optical Communications; Electrical and Electronic Engineering; Elektronik; Elektrotechnik; BB; EA
2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures.- PSP: An advanced surface-potential-based MOSFET model.- EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model.- Modelling using high-frequency measurements.- Empirical FET models.- Modeling the SOI MOSFET nonlinearities. An empirical approach.- Circuit level RF modeling and design.- On incorporating parasitic quantum effects in classical circuit simulations.- Compact modeling of the MOSFET in VHDL-AMS.- Compact modeling in Verilog-A.Brings together a variety of modeling techniques Treats models as well as methods of implementation Is a true in depth source for MOS-modelers
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