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ISBN: 9789401129121
Survey of Semiconductor Physics ab 96.49 € als pdf eBook: Volume II Barriers Junctions Surfaces and Devices. Aus dem Bereich: eBooks, Sachthemen & Ratgeber, Technik, Medien > Bücher nein … Meer...
ISBN: 9789401129121
Survey of Semiconductor Physics - Volume II Barriers Junctions Surfaces and Devices: ab 96.49 € eBooks > Sachthemen & Ratgeber > Technik Springer Netherlands eBook als pdf, Springer Nethe… Meer...
ISBN: 9789401129121
Survey of Semiconductor Physics - Volume II Barriers Junctions Surfaces and Devices: ab 96.49 € eBooks > Sachthemen & Ratgeber > Technik Springer Netherlands, Springer Netherlands
2012, ISBN: 9789401129121
Volume II Barriers, Junctions, Surfaces, and Devices, eBooks, eBook Download (PDF), [PU: Springer Netherlands], Springer Netherlands, 2012
ISBN: 9789401129121
; ; Scientific, Technical and Medical > Physics > Electricity, electromagnetism & magnetism; GBP
Bibliografische gegevens van het best passende boek
auteur: | |
Titel: | |
ISBN: |
Gedetalleerde informatie over het boek. - Survey of Semiconductor Physics
EAN (ISBN-13): 9789401129121
Verschijningsjaar: 2012
Uitgever: Springer Netherlands
Boek bevindt zich in het datenbestand sinds 2017-05-22T09:18:55+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2023-03-22T21:05:39+01:00 (Amsterdam)
ISBN/EAN: 9789401129121
ISBN - alternatieve schrijfwijzen:
978-94-011-2912-1
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: boer
Titel van het boek: physics semiconductor devices
Gegevens van de uitgever
Auteur: Karl W. Böer
Titel: Survey of Semiconductor Physics - Volume II Barriers, Junctions, Surfaces, and Devices
Uitgeverij: Springer; Springer Netherland
1442 Bladzijden
Verschijningsjaar: 2012-12-06
Dordrecht; NL
Taal: Engels
53,49 € (DE)
55,00 € (AT)
59,00 CHF (CH)
Available
XCIV, 1442 p.
EA; E107; eBook; Nonbooks, PBS / Physik, Astronomie/Atomphysik, Kernphysik; Elektronische Geräte und Materialien; Verstehen; Doping; Semiconductor; crystal; electron; epitaxy; semiconductor physics; solar cell; C; Semiconductors; Classical Electrodynamics; Optical Materials; Condensed Matter Physics; Spectroscopy; Physics and Astronomy; Elektrizität, Magnetismus und Elektromagnetismus; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Spektroskopie, Spektrochemie, Massenspektrometrie; BC
I: Surface Properties.- 1 Introduction.- 2 Crystal Surfaces, An Introduction.- 3 Surface Analysis.- 4 Surface Structures.- 5 Crystal Growth, Epitaxy.- 6 Phononic Effects at Surfaces.- 7 Electronic Surface and Interface States.- 8 Semiconductor Interfaces and Contacts.- 9 Electron Penetration through Surfaces.- 10 Photon Penetration through Surfaces.- 11 Surface Influence on Bulk Properties.- II: Space-Charge Effects in Semiconductors.- 12 Space Charges in Insulators.- 13 Creation of Space-Charge Regions in Solids.- 14 The Schottky Barrier.- 15 Minority Carriers.- 16 Minority Carrier Currents.- 17 Schottky Barrier in Two-Carrier Model.- 18 pn-Homojunctions.- 19 Carrier Velocity Limitation.- 20 Semiconductor Heterojunctions.- 21 The Photovoltaic Effect.- 22 The Schottky Barrier Photodiode.- 23 The pn-Junction with Light.- 24 The Heterojunction with Light.- 25 The pin Junction with Light.- 26 High-Field Domains.- 27 Current Channels.- III: Materials and Fabrication Technology.- 28 Purification of Semiconductor Materials.- 29 Crystallization and Device Shaping.- 30 Doping and Junction Formation.- 31 Electrodes.- 32 Integrated Circuit Processing.- IV: Semiconductor Devices.- 33 Schottky Barriers and Diodes.- 34 Solar Cells.- 35 Light Emitting Devices.- 36 Transistors and Multiterminal Devices.- 37 Semiconductors and Devices: An Epilogue.- V:.- Appendix Computation Routines and Tables.- A.1 Numerical Methods.- A.1.1 The Kutta-Merson Integration Routine.- A.1.1A Runge-Kutta Part.- A.1.1B Kutta-Merson Part.- A.1.2 The Finite Element Numerical Method.- A.1.3 The Pros and Cons of the Two Methods.- A.2 Some Mathematical Tools.- A.2.1 Series.- A.2.2 Coordinate Systems.- A.2.3 The Wave Equation.- A.3 List of Acronyms.- A.4 Symbols Used.- A.5 Important Derived Parameters.- A.6 Summary of Important Equations.- A.6.1 Space Charge Related.- A.6.1A Constant Space Charge Distributions.- A.6.1B Majority Carrier Injection (Space Charge Limited Current).- A.6.1C Classical Schottky Barrier.- A.6.1D Modified Schottky Barrier.- A.6.1E Two-Level Schottky Barriers.- A.6.1F Heterojunction Quasi-Schottky Barrier.- A.6.1G Quasi-Schottky Barrier with Interface Recombination.- A.6.1H Carrier Generation and Recombination.- A.6.1I Diffusion Currents.- A.6.1J Drift-Enhanced Diffusion Current.- A.6.1K Tunneling Current.- A.6.1L Majority Carrier Distribution Near Junction.- A.6.1M Carrier Velocity Saturation.- A.6.1N pn-Homojunctions.- A.6.1O Surface Recombination Current.- A.6.1P Surface Conditions with Light.- A.6.1Q pn-Junction with Light.- A.6.1R Classical Solar Cell Diode Model.- A.6.2 Vacuum Related.- A.6.3 Phonon Related.- A.6.4 Photon Related.- A.6.4A Reflection and Transmission of Light.- A.7 Tables.- Word Index.Andere boeken die eventueel grote overeenkomsten met dit boek kunnen hebben:
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