Nanoscaled Semiconductor-on-Insulator Structures and Devices (NATO Science for Peace and Security Series B: Physics and Biophysics) - gebonden uitgave, pocketboek

EAN (ISBN-13): 9781402063787
ISBN (ISBN-10): 1402063784
Gebonden uitgave
Verschijningsjaar: 2007
Uitgever: Hall, S. Nazarov, A.N. Lysenko, V.S. Springer
371 Bladzijden
Gewicht: 0,687 kg
Taal: eng/Englisch

Boek bevindt zich in het datenbestand sinds 2007-06-04T14:40:40+02:00 (Amsterdam)
Detailpagina laatst gewijzigd op 2022-10-11T16:39:28+02:00 (Amsterdam)
ISBN/EAN: 1402063784

ISBN - alternatieve schrijfwijzen:
1-4020-6378-4, 978-1-4020-6378-7
alternatieve schrijfwijzen en verwante zoekwoorden:
Auteur van het boek: nazarov, hall james, lysenko, will hall, lyssenko
Titel van het boek: science structures, insu, semiconductor physics and devices, devices wonder, james hall

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Gegevens van de uitgever

Auteur: S. Hall; A.N. Nazarov; V.S. Lysenko
Titel: NATO Science for Peace and Security Series B: Physics and Biophysics; Nanoscaled Semiconductor-on-Insulator Structures and Devices
Uitgeverij: Springer; Springer Netherland
369 Bladzijden
Verschijningsjaar: 2007-07-09
Dordrecht; NL
Gedrukt / Gemaakt in
Gewicht: 1,570 kg
Taal: Engels
213,99 € (DE)
219,99 € (AT)
236,00 CHF (CH)
POD
XIII, 369 p.

BB; Optical and Electronic Materials; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Verstehen; Anode; CMOS; FinFET; IC; MOSFET; Nanotube; Potential; Transistor; electronics; heterojunction bipolar transistor; integrated circuit; metal oxide semiconductur field-effect transistor; modeling; quantum dot; simulation; Nanotechnology; Electrical Engineering; Electronics and Microelectronics, Instrumentation; Optical Materials; Nanotechnology; Electrical and Electronic Engineering; Electronics and Microelectronics, Instrumentation; Nanotechnologie; Elektrotechnik; Elektronik; BC

Introduction.- Nanoscaled SOI Material and Device Technologies.- Status and Trends in SOI nanodevices; F. Balestra.- Non-planar devices for nanoscale CMOS; M.C. Lemme et al.- High-k dielectric stacks for nanoscaled SOI devices; S. Hall et al.- Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer; V. Popov et al.- Fluorine – Vacancy Engineering: A viable solution for dopant diffusion suppression in SOI substrates; H.A.W. El Mubarek, P. Ashburn.- Suspended Silicon-On-Insulator nanowires for the fabrication of quadruple gate MOSFETs; V. Passi et al.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors operating at room temperature; T. Hiramoto.- SiGe nanodots in electro-optical SOI devices; A.V. Dvurechenskii et al.- Nanowire quantum effects in trigate SOI MOSFETs; J.-P. Colinge.- Semiconductor nanostructures and devices; J. Knoch, H. Lüth.- MugFET CMOS process with midgap gate material; W. Xiong et al.- Doping fluctuation effects in multiple-gate SOI MOSFETs; C.A. Colinge et al.- SiGeC HBTs: impact of C on device performance; I.Z. Mitrovic et al.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise research of nanoscaled SOI devices; N. Lukyanchikova.- Electrical characterization and special properties of FINFET structures; T. Rudenko et al.- Substrate effect on the output conductance frequency response of SOI MOSFETs; V. Kilchytska et al.- Investigation of compressive strain effects induced by STI and ESL; S. Zaouia et al.- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology; A. Nazarov et al.- Theory and Modeling of Nanoscaled Devices.- Variability in nanoscale UTB SOI devices and its impact on circuits and systems; A. Asenov, K. Samsudin.- Electron transport in Silicon-On-Insulator nanodevices; F. Gamiz et al.- All quantum simulation of ultrathin SOIMOSFETs; A. Orlikovsky et al.- Resonant tunneling devices on SOI basis; B. Majkusiak.- Mobility modeling in SOI FETs for different substrate orientations and strain conditions; V. Sverdlov et al.- Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical GATE All Around MOSFETs; H.A. El Hamid et al. Authors Index.
Proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices, Big Yalta, Ukraine, 15-19 October 2006;